Effect of Incorporating Metal nanoparticles in High-k Dielectrics for NanoFLASH and NanoCMOS

Author

Pavel, Akeed A. ; Kirawanich, Phumin ; Ravindran, Ramasamy ; Gangopadhyay, Shubhra ; Islam, Naz

Author_Institution

Missouri Univ., Columbia

fYear

2007

fDate

20-22 April 2007

Firstpage

25

Lastpage

28

Abstract

Deposition of silver nano-particles (Ag-nps) in a thin aluminum oxide layer resulting in an increased frequency dependent dielectric constant has been investigated for possible applications in nano-FLASH memory and nano-CMOS devices. The design of nano-FLASH memory with embedded Ag-nps in the gate oxide has been analyzed through simulation that demonstrates the charge storage capability of Ag-nps. A large shift in threshold voltage (˜7.5V) was found with a programming gate voltage of only 1 V, indicating very low power consumption by the device. The programming time requirement was found to be less than 10 nano-seconds and is erasable.

Keywords

CMOS integrated circuits; flash memories; high-k dielectric thin films; nanoparticles; permittivity; frequency dependent dielectric constant; high-kappa dielectrics; metal nanoparticles; nanoCMOS devices; nanoFLASH memory; silver nanoparticle deposition; storage capability; thin aluminum oxide layer; Aluminum oxide; Analytical models; Dielectric constant; Energy consumption; Frequency dependence; High-K gate dielectrics; Nanoparticles; Nanoscale devices; Silver; Threshold voltage; Dielectric constant; FLASH memory; Gate Oxide; Nnao-particle; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Region 5 Technical Conference, 2007 IEEE

Conference_Location

Fayetteville, AR

Print_ISBN

978-1-4244-1279-2

Electronic_ISBN

978-1-4244-1280-8

Type

conf

DOI

10.1109/TPSD.2007.4380345

Filename

4380345