Monolithic Integration of Heterojunction Bipolar Transistor and Grating-Outcoupled Surface Emitting Laser Electronic-Photonic Integrated Circuit

This paper reports on the design, growth, fabrication, and processing of an integrated Grating-Outcoupled Surface Emitting (GSE) semiconductor laser and a Double Heterojunction Bipolar Transistor (DHBT) driver. The GSE laser has a 380 mum long gain section, 15 mum long out-coupler, and 200 mum long distributed Bragg reflectors (DBRs). The design of the DHBT includes an InP emitter and collector and an InGaAs carbon doped base layer. Advantages of electronic-photonic integrated circuits (EPICs) include 1) increased speed, 2) lower noise, 3) reduced power requirements since the driver and laser no longer need to be matched to a 50-ohm transmission line, 4) on-wafer testing capability and mapping of known good die, 5) reduced packaging costs, and 6) improved reliability.