A numerical study of various asymmetric quantum well structures

Author

Recine, G. ; Rosen, B. ; Cui, H.L.

Author_Institution

Appl. Electron. Lab., Stevens Inst. of Technol., Hoboken, NJ, USA

Volume

2

fYear

2003

fDate

12-14 Aug. 2003

Firstpage

717

Abstract

Numerical studies of transient and steady state one-dimensional transport through resonant tunneling structures (RTSs) have been widely reported. For the most part, the structures studied have been symmetric and single welled. Following the method of Buot-Jensen, we apply a lattice Weyl-Wigner 1D single band transport code to both double barrier (DBRTS) and triple barrier (TBRTS) GaAs/AlGaAS structures which are spatial asymmetric (barrier/well thicknesses). Both the transient and steady state behaviors are studied. Preliminary results show that the current-voltage characteristics (a) vary drastically from those obtained from the associated symmetric structure.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; numerical analysis; quantum wells; resonant tunnelling; 1D single band transport code; Buot-Jensen method; GaAs-AlGaAS structures; GaAs-AlGaAs; asymmetric quantum well structures; current-voltage characteristics; double barrier tunneling structures; lattice Weyl Wigner; numerical study; resonant tunneling structures; steady state one dimensional transport; symmetric structure; transient state one dimensional transport; tripple barrier tunneling structures; Current density; Current-voltage characteristics; Distribution functions; Gallium arsenide; Kinetic theory; Lattices; Poisson equations; Resonant tunneling devices; Scattering; Steady-state;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on

Print_ISBN

0-7803-7976-4

Type

conf

DOI

10.1109/NANO.2003.1231013

Filename

1231013