Title :
All optical demultiplexing from 160 to 40-Gb/s utilizing InGaAs/AlAsSb quantum well intersubband transition switch
Author :
Akimoto, R. ; Cong, G.W. ; Nagase, M. ; Mozume, T. ; Tsuchida, H. ; Hasama, T. ; Ishikawa, H.
Author_Institution :
Ultrafast Photonics Devices Lab., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
We demonstrated all optical demultiplexing from 160 to 40-Gb/s by intersubband transition switch. This was enabled by quantum well with high XPM efficiency and bi-directional pump configuration.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; demultiplexing; gallium arsenide; indium compounds; integrated optics; optical communication equipment; optical pumping; optical switches; semiconductor quantum wells; InGaAs-AlAsSb; XPM efficiency; all optical demultiplexing; bi-directional pump configuration; bit rate 160 Gbit/s; bit rate 40 Gbit/s; intersubband transition switch; quantum well; Absorption; Bidirectional control; Demultiplexing; High speed optical techniques; Indium gallium arsenide; Optical pumping; Optical signal processing; Optical waveguides; Switches; Ultrafast optics;
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
DOI :
10.1109/ECOC.2008.4729449
