Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Author

Han, T.T. ; Han, P. ; Qin, Z. ; Yan, B. ; Shi, J. ; Li, Z.B. ; Liu, C.X. ; Fu, K. ; Zhu, S.M. ; Shi, Y. ; Zhang, R. ; Zheng, Y.D.

Author_Institution

Dept. of Phys., Nanjing Univ., China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

85

Lastpage

88

Abstract

Single-crystal 3C-SiC films has been deposited on Si(111) substrates in a hot-wall chemical vapor deposition system. The temperature range for growing the SiC films is from 1030°C to 1130°C. The reaction precursors are SiH₄ and C₂H₄, while H₂ is the carrier gas. The effect of the partial pressure of ethene P_C2H4 on the film quality has been investigated by X-ray diffractometry and Raman scattering. Within the P_C2H4 range in this work, the higher P_C2H4 could help to improve the quality of 3C-SiC films. The thickness and refractive index of films was measured with spectroscopic ellipsometry. The effect of P_C2H4 on the growth rate is also explained with the reported standpoint of the initial deposition process.

Keywords

CVD coatings; Raman spectra; chemical vapour deposition; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; 1030 to 1130 degC; Raman scattering; Si; SiC; X-ray diffractometry; chemical vapor deposition; ethene partial pressure; film crystallinity; refractive index; spectroscopic ellipsometry; Chemical vapor deposition; Crystallization; Optical films; Raman scattering; Refractive index; Silicon carbide; Substrates; Temperature distribution; Thickness measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511392

Filename

1511392