Title :
Analysis of carbon nanotube intramolecular p-n tunnel junction transistors
Author :
Richardson, W.H.
Abstract :
A theory of intramolecular p-n junction transistors that is based on mesoscopic material parameters is presented. The tunneling rate across each junction was calculated using, the Matsubara-Green´s function technique. Characteristics of the transistor such as gain, output voltage versus current, and output voltage versus input voltage were calculated. The results of the theory are compared with experimental data. Our formalism also predicts new features such as voltage steps in the negative differential region of the current-voltage characteristics, and a device with current limiting features.
Keywords :
Green´s function methods; carbon nanotubes; negative resistance; p-n junctions; semiconductor device models; single electron transistors; C; Matsubara-Green´s function technique; carbon nanotube intramolecular p-n tunnel junction transistors; current limiting features; current-voltage characteristics; mesoscopic material parameters; negative differential region; transistor gain; tunneling rate; voltage steps; Carbon nanotubes; Circuits; Contacts; Current-voltage characteristics; Electrostatics; FETs; P-n junctions; Single electron transistors; Tunneling; Voltage;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231022
