Title :
Two-terminal Si-nanocrystal memory formed between the two metal layers
Author :
Fujita, Shinobu ; Yasuda, Shin-ichi ; Abe, Keiko ; Sugiyama, Naoharu
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We propose MIM memory with Si-nanocrystals embedded in the insular has been demonstrateted. This memory is preferable for a nonvolatile memory cell that can be formed between the two metal layers of CMOS circuits and vertically stacked, since the device process is entirely compatible to Si device process.
Keywords :
CMOS memory circuits; MIM devices; elemental semiconductors; nanostructured materials; silicon; CMOS circuits; MIM memory; Si; Si device process; metal layers; nonvolatile memory cell; two terminal Si nanocrystal memory; CMOS memory circuits; Electrons; Inorganic materials; Large scale integration; Magnetic materials; Metal-insulator structures; Nonvolatile memory; Random access memory; Read-write memory; Voltage;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231024
