DocumentCode
2060119
Title
Electron transport in parallel interacting artificial molecules
Author
Cosby, Ronald M. ; Hoffmann, James A. ; Joe, Yong S.
Author_Institution
Dept. of Phys. & Astron., Ball State Univ., Muncie, IN, USA
Volume
2
fYear
2003
fDate
12-14 Aug. 2003
Firstpage
766
Abstract
The low-field conductance of interacting artificial molecular wires is simulated using a single-electron model. Coupled artificial molecules consisting of parallel chains of open quantum dots in a two-dimensional electron gas display a split-off molecular band with an energy separation that grows with the coupling strength. The position of the Fermi energy relative to the molecular band states plays a dominant role in determining the low-field conductance. The predicted conductance variation with coupling for dual five-atom molecular wires ranges from oscillatory to monotonic, depending on the Fermi energy. For electron energies near a resonant state, results imply that conductance measurements on molecules in parallel could vary significantly with the inter-molecular spacing.
Keywords
Fermi level; III-V semiconductors; aluminium compounds; electric admittance; electronic structure; energy gap; gallium arsenide; gallium compounds; resonant states; semiconductor process modelling; semiconductor quantum dots; two-dimensional electron gas; wires (electric); AlGaAs; Fermi energy; GaAs; artificial molecules; coupling strength; dual five atom molecular wires; electron energies; electron transport; field conductance; inter-molecular spacing; molecular band; molecular band states; quantum dots; resonant state; single electron model; two dimensional electron gas; Astronomy; Concurrent computing; Couplings; Electrodes; Electrons; Energy measurement; Molecular electronics; Physics computing; Quantum dots; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN
0-7803-7976-4
Type
conf
DOI
10.1109/NANO.2003.1231026
Filename
1231026
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