The effect of block oxide height on a self-aligned source/drain-tied nBOFET

This paper examines the effect of block oxide height (H_BO) on a self-aligned (SA) source/drain-tied n-shaped block oxide field-effect transistor (S/D-tied nBOFET). According to the simulation results of a two-dimensional (2-D) numerical simulator DESSIS, the height of the block oxide is one of the important parameters for the suppression of short-channel effects (SCEs). Hence, the forming of H_BO becomes a key process for designing the proposed structure. We also found out that the higher H_BO results in an improvement not only in drain-induced barrier lowering (DIBL) but also in subthreshold swing (SS) chiefly owing to the improved SCEs. In addition, the self-heating effects (SHEs) in silicon-on-insulator (SOI) are reduced because the S/D-tied scheme enhances the thermal conduction of heat accumulated.