DocumentCode :
2060140
Title :
Electrostatically Actuated Nano Tweezers Fabricated on Micro Processed Electrodes
Author :
Chang, Jiyoung ; Kim, Jongbaeg ; Min, Byung-Kwon ; Lee, Sang-Jo ; Lin, Liwei
Author_Institution :
Sch. of Mech. Eng., Yonsei Univ., Seoul
fYear :
2006
fDate :
18-21 Jan. 2006
Firstpage :
1440
Lastpage :
1444
Abstract :
Nanoscale tweezers are integrated to deep reactive ion etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the carbon nano tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved. Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17 mum in length and 300 nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93 V for 3.5 mum and 30 V for 2.21 mum gaps. The dimension of straight type tweezers is 19.6 mum in length and 300 nm in diameter with 6.9 mum initial gap distance. Tweezing range is 3.4 mum and snap down voltage is 102 V. Young´s modulus of the FIB-CVD carbon tweezers is estimated to be 377 GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented
Keywords :
carbon; chemical vapour deposition; electrostatic actuators; focused ion beam technology; microelectrodes; micromanipulators; nanostructured materials; silicon-on-insulator; sputter etching; 102 V; 17 micron; 19.6 micron; 2.21 micron; 3.4 micron; 3.5 micron; 30 V; 300 nm; 6.9 micron; 93 V; C; FIB-CVD; MEMS electrodes; SOI wafer; Young modulus; bent type tweezers; carbon tweezers; deep reactive ion etching; electrostatic actuation; electrostatic tweezing action; electrostatically actuated nanotweezers; focused ion beam; interconnecting platform; localized chemical vapor deposition; microelectrodes; microelectromechanical system; microprocessed electrodes; nanoscale device; nanoscale tweezers; silicon-on-insulator; snap-down threshold voltages; straight type tweezers; Chemical vapor deposition; Electrodes; Electrostatic actuators; Etching; Ion beams; Microelectrodes; Micromechanical devices; Nanoscale devices; Shape; Voltage; Electrostatic force; Nano manipulation; Nanotweezer; Young´s modulus; component;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
Conference_Location :
Zhuhai
Print_ISBN :
1-4244-0139-9
Electronic_ISBN :
1-4244-0140-2
Type :
conf
DOI :
10.1109/NEMS.2006.334784
Filename :
4135214
Link To Document :
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