• DocumentCode
    2060140
  • Title

    Electrostatically Actuated Nano Tweezers Fabricated on Micro Processed Electrodes

  • Author

    Chang, Jiyoung ; Kim, Jongbaeg ; Min, Byung-Kwon ; Lee, Sang-Jo ; Lin, Liwei

  • Author_Institution
    Sch. of Mech. Eng., Yonsei Univ., Seoul
  • fYear
    2006
  • fDate
    18-21 Jan. 2006
  • Firstpage
    1440
  • Lastpage
    1444
  • Abstract
    Nanoscale tweezers are integrated to deep reactive ion etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the carbon nano tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved. Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17 mum in length and 300 nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93 V for 3.5 mum and 30 V for 2.21 mum gaps. The dimension of straight type tweezers is 19.6 mum in length and 300 nm in diameter with 6.9 mum initial gap distance. Tweezing range is 3.4 mum and snap down voltage is 102 V. Young´s modulus of the FIB-CVD carbon tweezers is estimated to be 377 GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented
  • Keywords
    carbon; chemical vapour deposition; electrostatic actuators; focused ion beam technology; microelectrodes; micromanipulators; nanostructured materials; silicon-on-insulator; sputter etching; 102 V; 17 micron; 19.6 micron; 2.21 micron; 3.4 micron; 3.5 micron; 30 V; 300 nm; 6.9 micron; 93 V; C; FIB-CVD; MEMS electrodes; SOI wafer; Young modulus; bent type tweezers; carbon tweezers; deep reactive ion etching; electrostatic actuation; electrostatic tweezing action; electrostatically actuated nanotweezers; focused ion beam; interconnecting platform; localized chemical vapor deposition; microelectrodes; microelectromechanical system; microprocessed electrodes; nanoscale device; nanoscale tweezers; silicon-on-insulator; snap-down threshold voltages; straight type tweezers; Chemical vapor deposition; Electrodes; Electrostatic actuators; Etching; Ion beams; Microelectrodes; Micromechanical devices; Nanoscale devices; Shape; Voltage; Electrostatic force; Nano manipulation; Nanotweezer; Young´s modulus; component;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on
  • Conference_Location
    Zhuhai
  • Print_ISBN
    1-4244-0139-9
  • Electronic_ISBN
    1-4244-0140-2
  • Type

    conf

  • DOI
    10.1109/NEMS.2006.334784
  • Filename
    4135214