• DocumentCode
    2060244
  • Title

    Demonstration of nano-structures using wedge-molding process

  • Author

    Wei, Wei ; Yang, Lany L. ; Bachman, Mark ; Li, Guann-Pyng

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    789
  • Abstract
    A technique for nano-pattern generation and transfer, called "wedge molding" process is demonstrated. The technique utilizes anisotropic wet-chemical etching of crystalline InP or silicon wafer to obtain ultra-smooth V-grooves with nano-scale features (such as lines and dots) to create molds for a nano-imprinting process. High fidelity polymer materials, such as PDMS and Epoxy, were chosen to replicate the nano-features of groove bottoms. The technique has advantages of low cost, easy fabrication, high throughput, and high fidelity in generating nano-scale features such as wires and dots. Preliminary results indicate anisotropic wet-chemical etching could achieve smaller than 30 nm lateral size at the bottom of etched groove. High fidelity PDMS molds and epoxy molds can be replicated from the etched V-groove. AFM results demonstrated that around 100 nm wide line pattern could be transferred to nitride wafer with controlled RIE process.
  • Keywords
    III-V semiconductors; atomic force microscopy; elemental semiconductors; indium compounds; moulding; nanolithography; silicon; sputter etching; 100 nm; AFM; InP; RIE process; Si; anisotropic wet chemical etching; crystalline InP; epoxy molds; etched groove; high fidelity polymer materials; nanoimprinting process; nanopattern generation; nanoscale features; nanostructures demonstration; silicon wafer; ultrasmooth V grooves; wedge molding process; Anisotropic magnetoresistance; Costs; Crystalline materials; Crystallization; Fabrication; Indium phosphide; Polymers; Silicon; Throughput; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1231032
  • Filename
    1231032