Molecular-beam epitaxial growth of position controlled InAs islands on clean edge of InGaAs/GaAs superlattice

Author

Cui, C.X. ; Chen, Y.H. ; Zhang, C.L. ; Jin, P. ; Xu, B. ; Shi, G.X. ; Zhao, C. ; Wang, Z.G.

Author_Institution

Lab. of Semicond. Mat. Sci., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

131

Lastpage

134

Abstract

A promising approach for positioning of InAs islands on [110]GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated. The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern´s effect is studied by the different indium fraction and thickness of In_xGa_1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; island structure; molecular beam epitaxial growth; nanopatterning; self-assembly; semiconductor growth; semiconductor quantum dots; semiconductor superlattices; InAs island; InGaAs-GaAs; InGaAs/GaAs superlattice cleaved edge; molecular beam epitaxial growth; quantum dots; self-assembly; strain nanopattern; Atomic layer deposition; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Nanopatterning; Quantum dots; Self-assembly; Solids; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511401

Filename

1511401