Catalyst synthesis and growth of indium nitride nanodots

Author

Xie, Z.L. ; Zhang, Rong ; Bi, Z.X. ; Liu, B. ; Xiu, X.Q. ; Gu, S.L. ; Shen, B. ; Shi, Y. ; Zheng, Y.D.

Author_Institution

Dept. of Phys., Nanjing Univ., China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

151

Lastpage

155

Abstract

The technique of indium droplets catalyst is used for the synthesis of InN nanodots on (0001) sapphire substrates via metalorganic chemical vapor deposition (MOCVD) technique using trimethyindium (TMIn: (CH₃)₃In) and NH₃, The morphology evolution of the InN nanodots are studied by AFM. The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. And the XPS has been used to investigate the elemental composition of InN nanodots. Our results demonstrate that In droplets catalyst MOCVD can be a very effective way to grow InN nanodots.

Keywords

III-V semiconductors; MOCVD; Raman spectra; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; catalysts; crystal morphology; indium compounds; nanostructured materials; semiconductor growth; semiconductor quantum dots; wide band gap semiconductors; AFM; Al₂O₃; InN; MOCVD; Raman scattering; X-ray diffraction; XPS; XRD; indium droplets catalyst; indium nitride nanodots; metalorganic chemical vapor deposition; morphology; Crystalline materials; Indium; Inorganic materials; MOCVD; Optical materials; Raman scattering; Substrates; Surface morphology; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511406

Filename

1511406