Title :
Synthesis of boron and boride compounds nanowire arrays by chemical vapor deposition
Author :
Yang, Deren ; Sha, Jian ; Ma, Xiangyang ; Wang, Jun ; Niu, Junjie ; Deren Yang
Author_Institution :
State Key Lab. of Silicon Mat., Zhejiang Univ., Hangzhou, China
Abstract :
Aligned single crystal boron nanowires (BNWs) were fabricated by CVD process in nano-channel Al2O3 (NCA) substrates at 800°C. Using boron nanowires as precursors, arrayed single crystal hexagonal MgB2 nanowires were fabricated by reacting BNWs in NCA with Mg vapor in a sealed vacuum quartz tube. And it is indicated that the nanowires had a superconducting transition temperature (Tc) at ∼35 K. Mg3B2O6 nanowires were fabricated in-situ at 950°C by reacting Mg, diborane and traces of oxygen. The growth mechanisms of these nanowires have been discussed.
Keywords :
boron; chemical vapour deposition; magnesium compounds; nanowires; superconducting transition temperature; type II superconductors; Al2O3; B; CVD; Mg3B2O6; MgB2; boride compounds nanowire arrays; boron; chemical vapor deposition; sealed vacuum quartz tube; superconducting transition; Aluminum oxide; Boron; Chemical vapor deposition; Crystallization; Electron emission; Furnaces; Magnesium compounds; Physics; Temperature; X-ray scattering;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511408
