Title :
Width dependent degradation of polycrystalline silicon TFTs
Author :
Kontogiannopoulos, G.P. ; Farmakis, F.V. ; Kouvatsos, D.N. ; Papaioannou, G.J. ; Voutsas, A.T.
Author_Institution :
NCSR Demokritos, Inst. of Microelectron., Agia Paraskevi
Abstract :
The DC stress induced device degradation of sequential lateral solidification (SLS) polysilicon thin film transistors (TFTs) was investigated by monitoring the threshold voltage in the linear regime of operation. Devices with different channel widths were compared. It was observed that the degradation of device parameters during hot carrier experiments was dependent on the channel width. The origin of this dependence is ascribed to self-heating effects.
Keywords :
silicon; thin film transistors; DC stress; Si; channel width; hot carrier; poly crystalline silicon TFT; self-heating effect; sequential lateral solidification; threshold voltage; width dependent degradation; Annealing; Degradation; Hot carriers; Laser sintering; Microelectronics; Monitoring; Silicon; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559344
