Preparation and characterization of ZnO nanotubes

Author

Xu, Weizhong ; Ye, Zhizhen ; Lu, Huanming ; Ma, Dewei ; Zhu, Liping ; Zhao, Binghui

Author_Institution

State Key Lab. of Silicon Mat., Zhejiang Univ., Hangzhou, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

168

Lastpage

171

Abstract

ZnO nanotubes were grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates without using any catalyst. Scanning electron microscopy measurement revealed that the ZnO nanotubes have hexagonal outer shape and round inner shape, the outer diameter is of 60∼110 nm and the wall thickness is 10∼15 nm. Transmission electron microscopy measurement showed that the nanotubes are single crystals with c-axis growth orientation. Low-temperature photoluminescence measurements revealed intense ultraviolet light emission near the band gap of ZnO at 3.37 eV, and show almost no broad green photoluminescence emission band related to native defects.

Keywords

II-VI semiconductors; MOCVD; nanotubes; photoluminescence; scanning electron microscopy; semiconductor growth; transmission electron microscopy; ultraviolet spectra; wide band gap semiconductors; zinc compounds; 10 to 15 nm; 60 to 110 nm; MOCVD; Si; ZnO; ZnO nanotubes; band gap; low-temperature photoluminescence; metalorganic chemical vapor deposition; scanning electron microscopy; transmission electron microscopy; ultraviolet light emission; Chemical vapor deposition; MOCVD; Nanotubes; Photoluminescence; Scanning electron microscopy; Shape measurement; Silicon; Thickness measurement; Transmission electron microscopy; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511410

Filename

1511410