DocumentCode :
2060469
Title :
Influence of inner transistors working modes on DGMOSFET 1/f noise
Author :
Misic, M. Videnovic ; Jevtic, M.
Author_Institution :
Dept. of Electron., Univ. of Novi Sad, Novi Sad
fYear :
2008
fDate :
11-14 May 2008
Firstpage :
557
Lastpage :
560
Abstract :
Influence of weighting factors |And1|2 and |And2|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime.
Keywords :
1/f noise; MOSFET; semiconductor device models; 1/f noise; DGMOSFET modelling; fault diagnostics; inner DGMOSFET transistors; inner transistors working modes; noise optimisation; nonsaturation regime; 1f noise; Circuit noise; Equivalent circuits; Integrated circuit noise; Low-frequency noise; MOS integrated circuits; MOSFETs; Microelectronics; Semiconductor device modeling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
Type :
conf
DOI :
10.1109/ICMEL.2008.4559346
Filename :
4559346
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2060469
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