• DocumentCode
    2060469
  • Title

    Influence of inner transistors working modes on DGMOSFET 1/f noise

  • Author

    Misic, M. Videnovic ; Jevtic, M.

  • Author_Institution
    Dept. of Electron., Univ. of Novi Sad, Novi Sad
  • fYear
    2008
  • fDate
    11-14 May 2008
  • Firstpage
    557
  • Lastpage
    560
  • Abstract
    Influence of weighting factors |And1|2 and |And2|2, which describe contribution of inner DGMOSFET transistors to overall 1/f noise, has been discussed. Their importance in DGMOSFET modelling, noise optimisation and diagnostics is presented for a DGMOSFET working in the non-saturation regime.
  • Keywords
    1/f noise; MOSFET; semiconductor device models; 1/f noise; DGMOSFET modelling; fault diagnostics; inner DGMOSFET transistors; inner transistors working modes; noise optimisation; nonsaturation regime; 1f noise; Circuit noise; Equivalent circuits; Integrated circuit noise; Low-frequency noise; MOS integrated circuits; MOSFETs; Microelectronics; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. MIEL 2008. 26th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-1881-7
  • Electronic_ISBN
    978-1-4244-1882-4
  • Type

    conf

  • DOI
    10.1109/ICMEL.2008.4559346
  • Filename
    4559346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2060469