DocumentCode :
2060557
Title :
Raman scattering study on diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation
Author :
Islam, M.R. ; Chen, N.F. ; Yamada, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Khulna, Bangladesh
fYear :
2004
fDate :
20-25 Sept. 2004
Firstpage :
185
Lastpage :
188
Abstract :
Raman scattering measurements have been performed in diluted magnetic semiconductor Ga1-xMnxAs prepared by Mn-ion implantation, deposition, and post-annealing technique. It is found that the Raman spectrum measured from the implanted surface of the sample shows some new weak modes in addition to the GaAs-like modes which are observed from the unimplanted surface. The new vibrational modes observed are assigned to MnAs-like modes. The coupled LO-phonon plasmon mode, and Mn and As related vibrational modes caused by Mn-ion implantation, deposition, and post-annealing are also observed. Furthermore, the GaAs-like modes are found to be shifted by approximately 4 cm-1 in the lower frequency side, compared with those observed from the unimplanted surface.
Keywords :
Raman spectra; annealing; gallium compounds; ion implantation; manganese compounds; phonon-plasmon interactions; semimagnetic semiconductors; surface phonons; surface states; vibrational modes; Ga1-xMnxAs; LO-phonon plasmon mode; Mn-ion implantation; Raman scattering; diluted magnetic semiconductor; postannealing; vibrational modes; weak modes; Gallium arsenide; Magnetic materials; Magnetic semiconductors; Materials science and technology; Molecular beam epitaxial growth; Optical scattering; Phonons; Raman scattering; Rayleigh scattering; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
Type :
conf
DOI :
10.1109/SIM.2005.1511414
Filename :
1511414
Link To Document :
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