Title :
Constant current tress characteristics of Ti doped Ta2O5 on silicon
Author :
Skeparovski, A. ; Novkovski, N. ; Paskaleva, A. ; Atanassova, E.
Author_Institution :
Fac. of Natural Sci. & Math., Inst. of Phys., Skopje
Abstract :
Electrical behavior of Ti doped Ta2O5 films under constant current stress was studied. It was found that during the current flow, electrons get trapped on pre-existing traps as well as on newly generated traps. Higher current levels are more efficient in creating new traps, but less efficient in filling up the preexisting traps. The presence of Ti atoms inhibits the positive charge generation, occurring in pure Ta2O5 films. A simple physical model, based on Ti-induced compensation of existing oxygen vacancies in Ta2O5, is presented to account for the observed phenomenon.
Keywords :
MOS capacitors; electric current; high-k dielectric thin films; tantalum compounds; titanium; vacancies (crystal); MOS capacitors; Si; Ta2O5:Ti; constant current stress; oxygen vacancies; physical model; positive charge generation; Carbon capture and storage; Doping; Electron traps; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Silicon; Sputtering; Stress; Voltage;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559352
