Title :
Synthesis and photonic applications of gallium nitride nanowires
Author :
Han, S. ; Jin, Wu ; Tang, Tao ; Zhou, C.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Southern California Univ., Los Angeles, CA, USA
Abstract :
High quality single crystal gallium nitride nanowires (GaN NWs) are synthesized with a novel chemical vapor deposition (CVD) method. Transport studies of single crystal GaN nanowire devices exhibit n-type transistor behavior with high electron mobility. Ultraviolet (UV) light sensors are fabricated with GaN NW devices. The nanowire sensors exhibited a substantial increase in conductance upon UV light exposure. In addition to the selectivity to different light wavelengths, short response and recovery time have also been obtained. In addition, a polarization anisotropy effect was demonstrated and studied for GaN NWs working as polarized UV detectors. The nanowire conductance varied periodically with the polarization angle of the incident light (θ), which can be well fitted into a function of cos2θ.
Keywords :
III-V semiconductors; chemical vapour deposition; electron mobility; field effect transistors; gallium compounds; nanotechnology; nanowires; photoconductivity; semiconductor growth; ultraviolet detectors; wide band gap semiconductors; GaN; GaN nanowire fabrication; chemical vapor deposition; electron mobility; n type transistor behavior; nanowire conductance; nanowire sensors; photoconductivity; photonic applications; polarization angle; polarization anisotropy effect; polarized UV detectors; single crystal gallium nitride nanowires; transport studies; ultraviolet light sensors; Chemical sensors; Chemical vapor deposition; Gallium nitride; HEMTs; III-V semiconductor materials; MODFETs; Nanowires; Optical polarization; Optoelectronic and photonic sensors; Photonic crystals;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231046
