Title :
1.55-μm GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer
Author :
Liu, H.Y. ; Sun, H.D. ; Navaretti, P. ; Ng, J.S. ; Hopkinson, M. ; Clark, A.H. ; Dawson, M.D.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Abstract :
We present the 1.55-μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with GaNAs or GaInNAs barrier and space layer (BSL). An enhancement of photoluminescence intensity and a remarkable reduction of emission linewidth of GaInNAs multiple QWs have been demonstrated by using GaInNAs quaternary BSL, instead of GaNAs BSL. These effects of GaInNAs BSL could be understood in term of the improvement of structural properties of GaInNAs QWs. These results present to us a variable approach to further developing GaAs-based light sources in the telecommunication wavelength range near 1.55 μm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; photoluminescence; semiconductor quantum wells; spectral line narrowing; ultraviolet sources; 1.55 mum; GaInNAs-GaAs; emission linewidth; light sources; multiple quantum well; photoluminescence; quaternary barrier; space layer; telecommunication wavelength; Gallium arsenide; Laser theory; Nitrogen; Photoluminescence; Power lasers; Quantum well lasers; Semiconductor lasers; Space technology; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
DOI :
10.1109/SIM.2005.1511415
