Title :
MOS capacitors characterization under illumination
Author :
Lopez, D. ; Monsieur, F. ; Balestra, F.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This work reports on an investigation of capacitance-voltage (C-V) and current-voltage (I-V) measurements on metal-oxide-semiconductor (MOS) capacitors and transistors under illumination. C-V characteristics under illumination differ considerably from those in dark due to an inversion of the substrate. The measurement frequency and illumination dependency has been investigated, a model has been introduced and an application for CMOS image sensor transistors is presented. I-V measurements under illumination allow the extraction of photogenerated carriers and thanks to a carrier separation method it is possible to determine their density and localization.
Keywords :
CMOS image sensors; MOS capacitors; MOSFET; characteristics measurement; semiconductor device measurement; CMOS image sensor transistors; MOS capacitors characterization; capacitance-voltage measurement; carrier separation method; current-voltage measurement; illumination dependency; measurement frequency; metal-oxide-semiconductor capacitors; photogenerated carriers; CMOS image sensors; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Frequency measurement; Lighting; MOS capacitors; MOSFETs; Semiconductor device modeling;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559353
