Magnetoresistance in GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures

Author

Zhou, Y.K. ; Kim, M.S. ; Kimura, S. ; Emura, S. ; Hasegawa, S. ; Asahi, H.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

198

Lastpage

201

Abstract

GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures were grown by radio frequency molecular beam epitaxy. During GaN and GaCrN growth, reflection high-energy electron diffraction pattern showed thin streaks and Kikuchi lines, indicating surface flatness and high crystalline quality. Clear hysteresis and clear saturation characteristics were observed in the magnetization versus magnetic field curves at all measuring temperatures. The coercivity H_c was about 130 Oe at 10 K. Hysteresis loop was observed in the magnetic field dependence of vertical electrical resistance.

Keywords

III-V semiconductors; chromium compounds; coercive force; electrical resistivity; electron diffraction crystallography; ferromagnetic materials; gallium compounds; magnetic hysteresis; magnetic multilayers; magnetoresistance; molecular beam epitaxial growth; surface structure; 10 K; GaCrN-GaN; Kikuchi lines; coercivity; crystalline quality; ferromagnet/nonmagnet/ferromagnet trilayers; hysteresis; magnetic field curves; magnetization; magnetoresistance; radio frequency molecular beam epitaxy; reflection high-energy electron diffraction; surface flatness; vertical electrical resistance; Crystallization; Diffraction; Electrons; Gallium nitride; Magnetic field measurement; Magnetic hysteresis; Magnetoresistance; Molecular beam epitaxial growth; Optical reflection; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511417

Filename

1511417