Title :
Comparison of interdiffusion between single and stacked-layer InGaAs/GaAs quantum dots
Author :
Lever, P. ; Fu, L. ; Tan, H.H. ; Jagadish, C. ; Reece, P. ; Gal, And M.
Author_Institution :
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In this work both thermal interdiffusion and impurity free vacancy disordering were studied and compared between two different QDs structures. One consisted of a single layer QDs, and the other of three-stacked-layer QDs. Different interdiffusion behaviors were observed in these QD structures and were discussed as the effects of strain accumulation and the presence of grown-in defects in QD system.
Keywords :
III-V semiconductors; chemical interdiffusion; dielectric materials; dielectric thin films; gallium arsenide; indium compounds; internal stresses; photoluminescence; semiconductor quantum dots; silicon compounds; thermal diffusion; vacancies (crystal); InGaAs-GaAs; InGaAs-GaAs-Si3N4; InGaAs-GaAs-SiO2; QD structures; grown-in defects; impurity free vacancy disordering; photoluminescence; single layer InGaAs-GaAs quantum dots; stacked layer InGaAs-GaAs quantum dots; strain accumulation effect; thermal interdiffusion; Atomic layer deposition; Capacitive sensors; Dielectric films; Gallium arsenide; Impurities; Indium gallium arsenide; Monolithic integrated circuits; Optical films; Quantum dots; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231048
