DocumentCode
2060652
Title
Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics
Author
Zebrev, G.I. ; Gorbunov, M.S. ; Osipenko, P.N.
Author_Institution
Dept. of Microelectron., Moscow Eng. Phys. Inst., Moscow
fYear
2008
fDate
11-14 May 2008
Firstpage
591
Lastpage
594
Abstract
Multi-scale approach based on physical, circuit and system levels for radiation effects modeling is considered. The model of low dose rate sensitivity of subthreshold leakage current is presented. Parameters for SPICE simulation can be obtained.
Keywords
SPICE; integrated circuit modelling; leakage currents; radiation effects; SPICE simulation; low dose-rate total dose effects; multiscale microelectronics modeling; radiation effects; subthreshold leakage current; Circuit simulation; Circuits and systems; Computational modeling; Electron traps; Leakage current; Microelectronics; Physics; Radiation effects; Space technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-1881-7
Electronic_ISBN
978-1-4244-1882-4
Type
conf
DOI
10.1109/ICMEL.2008.4559355
Filename
4559355
Link To Document