Title :
Multi-scale modeling of low dose-rate total dose effects in advanced microelectronics
Author :
Zebrev, G.I. ; Gorbunov, M.S. ; Osipenko, P.N.
Author_Institution :
Dept. of Microelectron., Moscow Eng. Phys. Inst., Moscow
Abstract :
Multi-scale approach based on physical, circuit and system levels for radiation effects modeling is considered. The model of low dose rate sensitivity of subthreshold leakage current is presented. Parameters for SPICE simulation can be obtained.
Keywords :
SPICE; integrated circuit modelling; leakage currents; radiation effects; SPICE simulation; low dose-rate total dose effects; multiscale microelectronics modeling; radiation effects; subthreshold leakage current; Circuit simulation; Circuits and systems; Computational modeling; Electron traps; Leakage current; Microelectronics; Physics; Radiation effects; Space technology; Threshold voltage;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559355
