Title :
New approach in estimating the lifetime in NBT stressed P-channel power VDMOSFETs
Author :
Dankovic, D. ; Manic, I. ; Davidovic, V. ; Djoric-Veljkovic, S. ; Golubovic, S. ; Stojadinovic, N.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Nis
Abstract :
A brief overview of NBT stress-induced threshold voltage instabilities in p-channel power vertical double- diffused MOS field-effect transistors (VDMOSFETs) is presented. New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs is proposed. The creation of lifetime surface for operating area, which can be useful for determination of device lifetime, operating temperature or operating bias, is demonstrated as well.
Keywords :
extrapolation; power MOSFET; semiconductor device models; semiconductor device reliability; NBT stress-induced threshold voltage instability; device lifetime; lifetime extrapolation; lifetime surface; negative bias temperature; operating bias; operating temperature; p-channel power VDMOSFETs; reliability; temperature model; vertical double-diffused MOS field-effect transistors; Extrapolation; Life estimation; Lifetime estimation; MOSFETs; Niobium compounds; Predictive models; Stress; Temperature distribution; Threshold voltage; Titanium compounds;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559357
