Title :
MOS junction based nanostructures by thermal oxidation of silicon wires for hydrogen detection
Author :
Tibuzzi, A. ; Decarli, M. ; Soncini, G. ; Natale, C. Di ; Amico, A.D. ; Margesin, B. ; Zen, M.
Author_Institution :
Dept. of Inf. & Commun. Technol., Trento Univ., Italy
Abstract :
Heavily p-doped monocrystalline silicon wires have been fabricated by employing wet etch and thermal oxidation steps to achieve a nanometric cross-section; a gate oxide growth and a final palladium evaporation made up the MOS junction able to detect hydrogen concentrations in air.
Keywords :
MIS devices; chemical sensors; elemental semiconductors; etching; gas sensors; hydrogen; nanowires; oxidation; silicon; MOS junction; Si; gate oxide growth; hydrogen concentrations; hydrogen detection; hydrogen sensor; nanometric cross section; nanostructures; p doped monocrystalline silicon wires; palladium evaporation; thermal oxidation; wet etch; Chemical sensors; Electrical resistance measurement; Hydrogen; Nanostructures; Nanowires; Oxidation; Palladium; Silicon; Wet etching; Wires;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1231056
