Edge dislocation of b= [001]/2 in the InAs nanostructure on InP(001)

Author

Wang, Y.L. ; Wu, J. ; Chen, Y.H. ; Wang, Z.G. ; Zeng, Y.P.

Author_Institution

Key Lab. of Semicond. Mat. Sci., Chinese Acad. of Sci., Beijing, China

fYear

2004

fDate

20-25 Sept. 2004

Firstpage

238

Lastpage

241

Abstract

The self-organized InAs/In_0.52Al_0.48As nanostructure were grown on InP(001) using molecular beam epitaxy (MBE). The nanostructure has been studied using transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The edge dislocations with the Burgers vector b =[001]/2 and extending along the [11~0] direction are observed. The results show that in the region near an edge dislocation, no InAs wires were formed, while in the regions free of dislocation, wire-like nanostructures were formed. The mechanisms for the formation of the [001]/2 edge dislocations were discussed.

Keywords

III-V semiconductors; aluminium compounds; edge dislocations; indium compounds; nanostructured materials; self-assembly; transmission electron microscopy; Burgers vector; InAs-In_0.52Al_0.48As; InP; MBE; TEM; edge dislocation; high resolution transmission electron microscopy; molecular beam epitaxy; self-organized InAs nanostructure; transmission electron microscopy; Capacitive sensors; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Nanostructured materials; Semiconductor materials; Substrates; Temperature; Transmission electron microscopy; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on

Print_ISBN

0-7803-8668-X

Type

conf

DOI

10.1109/SIM.2005.1511427

Filename

1511427