DocumentCode :
2060881
Title :
Growth and characteristics of InP/InxGa1-xAs/In0.53Ga0.47As HEMTs
Author :
Xie, Zili ; Jai Qiu ; Juan Sun
Author_Institution :
Dept. of Phys., Nanjing Univ., China
fYear :
2004
fDate :
20-25 Sept. 2004
Firstpage :
242
Lastpage :
246
Abstract :
The materials with InxGa1-xAs/ln0.53Ga0.47As composite channel of InP HEMT have been designed and grown by MBE in this paper. This channel has high 2DEG density and mobility, and has better channel conductivity when X-0.7. In virtue of InGaAs/InAs/InGaAs composite channel, the electron mobility of the material reaches 13600 cm2/v*s and the 2DEG density is 2.3×1012 cm2.
Keywords :
III-V semiconductors; electron density; electron mobility; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; two-dimensional electron gas; 2DEG density; HEMT; InP-InGaAs; MBE; channel conductivity; composite channel; electron mobility; Composite materials; Conducting materials; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
Type :
conf
DOI :
10.1109/SIM.2005.1511428
Filename :
1511428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2060881
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