Title :
2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC
Author :
Larie, Aurelien ; Kerherve, Eric ; Martineau, Baudouin ; Vogt, Lionel ; Belot, Didier
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
The widespread deployment of high-data-rate wireless connectivity was enabled by the adoption of the WiGig (802.11ad) standard, consequently placing a challenge on integrated Power Amplifiers (PAs). To comply with system requirements, the PA must cover bands from 57 to 66GHz and deliver up to 10dBm RF modulated power, while OFDM modulations up to 16 or 64QAM are supported, implying a large Peak-to-Average Power Ratio (PAPR).
Keywords :
CMOS analogue integrated circuits; MIMIC; OFDM modulation; millimetre wave power amplifiers; quadrature amplitude modulation; silicon-on-insulator; 16QAM; 64QAM; 802.11ad standard; OFDM modulations; PAE; PAPR; RF modulated power; UTBB FD-SOI CMOS reconfigurable power amplifier; WiGig standard adoption; efficiency 21 percent; frequency 57 GHz to 66 GHz; high-data-rate wireless connectivity; integrated PA; integrated power amplifiers; peak-to-average power ratio; size 28 nm; CMOS integrated circuits; Linearity; Logic gates; Power amplifiers; Power demand; Radio frequency; Solid state circuits;
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
DOI :
10.1109/ISSCC.2015.7062919
