DocumentCode :
2061659
Title :
5.4 A 32nW bandgap reference voltage operational from 0.5V supply for ultra-low power systems
Author :
Shrivastava, Aatmesh ; Craig, Kyle ; Roberts, Nathan E. ; Wentzloff, David D. ; Calhoun, Benton H.
Author_Institution :
PsiKick, Charlottesville, VA, USA
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
Most systems require a voltage reference independent of variation of power supply, process, or temperature, and a bandgap voltage reference (BGR) often serves this purpose. For ultra-low power (ULP) systems, the BGR may constitute a significant component of standby power, and the system start-up voltage is often determined by the voltage, Vin, at which the BGR becomes operational. Lowering Vin can also allow an ULP system to continue operation longer as its battery or energy harvested input voltage decreases. The minimum Vin for state-of-the-art BGRs is restricted by VEB+VDS [1], where VEB is the emitter-base voltage of a pnp transistor, and VDS is the drain-source saturation voltage of a MOS transistor. Recent work brings the Vin voltage down to 700mV [2]. There is a need to reduce the standby power and Vin of a BGR to increase the lifetime of ULP systems. This paper presents a BGR circuit with measured minimum operating Vin of 500mV, reducing the Vin of [2] by 1.4x. Further, the power consumption of the proposed circuit is 32nW, which is 1.6x lower than the non-duty cycled BGR reported in [2]. A 2x-charge pump based bandgap core, a switched-capacitor network (SCN), and a current controlled oscillator and clock doubler circuit enable a BGR with a temperature variation of 75ppm/°C and power supply rejection (PSR) of up to -52dB at DC.
Keywords :
MOSFET; charge pump circuits; oscillators; switched capacitor networks; BGR circuit; MOS transistor; SCN; ULP system lifetime; bandgap reference voltage; battery input voltage; charge pump-based bandgap core; clock doubler circuit; current-controlled oscillator; drain-source saturation voltage; emitter-base voltage; energy harvested input voltage; nonduty-cycled BGR; pnp transistor; power 32 nW; power supply rejection; power supply variation; standby power reduction; switched-capacitor network; system start-up voltage; temperature variation; ultralow-power systems; voltage 500 mV; CMOS integrated circuits; Capacitors; Clocks; Photonic band gap; Power demand; Solid state circuits; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7062942
Filename :
7062942
Link To Document :
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