DocumentCode
2061947
Title
Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)
Author
Shestakov, Alexander K. ; Zhuravlev, Konstantin S. ; Arykov, Vadim S. ; Kagadei, Valery A.
Author_Institution
Rzhanov Inst. of Semicond. Phys., Russian Acad. of Sci., Novosibirsk, Russia
fYear
2010
fDate
9-11 Dec. 2010
Firstpage
33
Lastpage
36
Abstract
Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).
Keywords
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; semiconductor device models; semiconductor doping; GaAs; MESFET; Schottky-barrier field-effect transistor; doping profile; ion implantation; saturation current; threshold voltage; Doping profiles; Gallium arsenide; MESFETs; Substrates; Threshold voltage; MESFET; TCAD; modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Fundamental Problems of Micro/Nanosystems Technologies (MNST), 2010 IEEE 2nd Russia School and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-5962-9
Electronic_ISBN
978-1-4244-5963-6
Type
conf
DOI
10.1109/MNST.2010.5687132
Filename
5687132
Link To Document