• DocumentCode
    2062123
  • Title

    7.4 A covalent-bonded cross-coupled current-mode sense amplifier for STT-MRAM with 1T1MTJ common source-line structure array

  • Author

    Chankyung Kim ; Keewon Kwon ; Chulwoo Park ; Sungjin Jang ; Joosun Choi

  • Author_Institution
    Samsung Electron., Hwaseong, South Korea
  • fYear
    2015
  • fDate
    22-26 Feb. 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper, we present a sensing scheme for STT-MRAM with 1T1MTJ common SL structure array: covalent-bonded cross-coupled current-mode sense amplifier (CBSA). The CBSA can fit in conventional DRAM array architecture and use two normal cells in adjacent BLs, one for storing data “1” and the other for storing data “0”, for generating reference currents for CBSA. There are 64 CBSAs in a row of 8k cells, where one CBSA and two references BLs are shared by adjacent 128 BLs. STT-MRAM cell is directly accessed instead of page opening as in DRAM. By introducing CBSAs as sensing schemes, read-access time can be reduced to under 10ns with strong robustness against wide random variations of MTJ cell resistances with a small TMR.
  • Keywords
    DRAM chips; MRAM devices; reference circuits; 1T1MTJ common source-line structure array; DRAM array architecture; MTJ cell resistances; STT-MRAM; covalent bonded sense amplifier; cross coupled sense amplifier; current mode sense amplifier; read-access time; reference currents; sensing schemes; Arrays; Latches; Magnetic tunneling; Microprocessors; Random access memory; Sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4799-6223-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2015.7062962
  • Filename
    7062962