Title :
Effect of substrate and doping profile parameters on characteristics of ion-implanted Schottky-barrier field-effect transistor (MESFET)
Author :
Konstantinovich, Shestakov Alexander
Abstract :
Application fields of GaAs field transistors: █ Cellular telephony █ High-speed fiber-optics data transfer █ Digital TV █ Wireless data transfer systems █ Radiolocation █ Satellite communication Requirements for transistors applied in these areas: █ High frequency (more than 3 GHz) █ High output power (more than 0.5 W/mm)
Keywords :
Analytical models; Semiconductor process modeling; Simulated annealing;
Conference_Titel :
Fundamental Problems of Micro/Nanosystems Technologies (MNST), 2010 IEEE 2nd Russia School and Seminar on
Conference_Location :
Novosibirsk, Russia
Print_ISBN :
978-1-4244-5962-9
Electronic_ISBN :
978-1-4244-5963-6
DOI :
10.1109/MNST.2010.5687145
