• DocumentCode
    2062656
  • Title

    The development of repairable Au-Al solid phase diffusion flip-chip bonding

  • Author

    Iida, Atsuko ; Kizaki, Yukio ; Fukuda, Yumi ; Mori, Miki

  • Author_Institution
    Mater. & Device Res. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    1997
  • fDate
    18-21 May 1997
  • Firstpage
    101
  • Lastpage
    107
  • Abstract
    The authors have developed a new repairable chip-on-glass (COG) bonding technique for liquid crystal display (LCD) panels. Gold (Au) bumps on an LSI chip were bonded directly to aluminum (Al) electrodes on a glass substrate by formation of Al-Au intermetallic compounds in the diffusion layer. The developed repairable bonding technique consists of two-level bonding process. First, the chip was bonded at 250°C. Partial interconnection could be obtained at the local contact portions between the Au bump and the Al electrode. If the electrical connection failed, the bonded chip was removed. There was a distribution of the area formed Al-Au intermetallic compounds at local contact portions for 250°C bonding. Some areas formed Al-Au intermetallic compounds of the Al electrode and were sometimes removed with the chip removal, with an underlying metal layer locally exposed at the surface. Then, a new chip was bonded on the same Al electrodes under the same conditions at 250°C. After obtaining the electrical connection, the second bonding was done at 350°C. An AlAu4 intermetallic formation was obtained by this bonding in the diffusion layer. Reliability tests of second bonded samples were carried out and the contact resistance between the Au bumps and the Al electrodes was measured by the four-probe resistance measurement. In the case that the exposed area ratio of the underlying metal layer was less than 30% of bonding area for each Al electrode, a stable electrical connection was achieved for a high temperature storage test and a thermal shock test. Thus it was confirmed that a stable electrical connection had been obtained by the proposed repairable bonding process
  • Keywords
    aluminium; chemical interdiffusion; contact resistance; flip-chip devices; gold; liquid crystal displays; microassembling; 250 C; 350 C; Al electrodes; Al-Au intermetallic compounds; AlAu4; AlAu4 intermetallic formation; Au bumps; Au-Al; Au-Al solid phase diffusion bonding; COG bonding technique; LCD panels; LSI chip; chip-on-glass bonding; contact resistance; diffusion layer; four-probe resistance measurement; glass substrate; high temperature storage test; liquid crystal display; reliability tests; repairable Au-Al flip-chip bonding; stable electrical connection; thermal shock test; two-level bonding process; Bonding processes; Contacts; Diffusion bonding; Electrical resistance measurement; Electrodes; Gold; Intermetallic; Liquid crystal displays; Solids; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1997. Proceedings., 47th
  • Conference_Location
    San Jose, CA
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-3857-X
  • Type

    conf

  • DOI
    10.1109/ECTC.1997.606153
  • Filename
    606153