Title :
Size-dependent recombination dynamics in ZnO nanowires
Author :
Reparaz, J.S. ; Güell, F. ; Wagner, M.R. ; Hoffmann, A. ; Cornet, A. ; Morante, J.R.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin, Germany
Abstract :
In this work, the influence of finite-size on the recombination dynamics of the neutral donor-bound exciton (DX) around 3.365 eV has been investigated for single-crystal ZnO NWs with different diameters grown on SiO2/Si substrates by the vapor transport method using Au as catalyst. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process.
Keywords :
II-VI semiconductors; excitons; nanowires; zinc compounds; ZnO; excitonic transition; nanowires; neutral donor-bound exciton; single-crystal NW; size-dependent recombination dynamics; surface induced recombination process; vapor transport method; Nanowires; Silicon;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942782
