DocumentCode :
2063215
Title :
12.6 90% Peak efficiency single-inductor-multiple-output DC-DC buck converter with output independent gate drive control
Author :
Yi-Ping Su ; Chiun-He Lin ; Shen-Yu Peng ; Ru-Yu Huang ; Te-Fu Yang ; Shin-Hao Chen ; Ting-Jung Lo ; Ke-Homg Chen ; Chin-Long Wey ; Ying-Hsi Lin ; Chao-Cheng Lee ; Jian-Ru Lin ; Tsung-Yen Tsai
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
22-26 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
Single-inductor multiple-output (SIMO) DC-DC buck converters, which possess the advantage of compact size, are commonly implemented in portable electronics like mobile phones and tablets. However, their power efficiency is degraded considerably, as illustrated in Fig. 12.6.1, when multiple outputs are requested in a wide range, such as 1.2 to 3.3V for tablets. The use of P-MOSFET [1][2] and N-MOSFET [3] switches results in low efficiency of 64 and 70% at outputs of 1.2 and 3.3V, respectively, because of low gate driving voltages and large on-resistance. This implies that conventional usage of P-MOSFET and N-MOSFET switches is inappropriate in SIMO converters [1-3]. This paper presents a SIMO converter with output-independent gate drive (OIGD) control for all N-MOSFET switches. One of the salient features is that OIGD control achieves output-voltage-independent characteristics on efficiency and keeps peak efficiency of 90% over the range of 1.2 to 3.3V for tablets. The other salient feature is that a low-power deadtime overstress recycling (DOR) technique retrieves 95% of energy loss during deadtime and releases the overstress problem simultaneously.
Keywords :
DC-DC power convertors; driver circuits; field effect transistor switches; DOR technique; N-MOSFET switches; OIGD control; SIMO DC-DC buck converters; energy loss; low-power deadtime overstress recycling; output independent gate drive control; portable electronics; single-inductor-multiple-output DC-DC buck converter; Control systems; DC-DC power converters; Inductors; Logic gates; MOSFET circuits; Recycling; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-6223-5
Type :
conf
DOI :
10.1109/ISSCC.2015.7063007
Filename :
7063007
Link To Document :
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