Design of low power UWB CMOS LNA using RC feedback and body-bias technology

Author

Meng-Ting Hsu ; Yu-Chang Hsieh ; An-Cheng Ou

Author_Institution

Dept. & Inst. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan

fYear

2013

fDate

28-31 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a 3.1-10.6GHz low power and low noise amplifier(LNA) band on the cascode configuration. The circuit design consists of RC-feedback and forward body bias technique. The measurement results show the proposed UWB CS LNA can achieve a maximum power gain (S21) of 10.8dB with the 3dB bandwidth from 3.1GHz to 10.6GHz. The input reflection coefficient S11 and output reflection coefficient S22 are lower than -8.1dB and -9.5dB, respectively. A minimum noise figure of 5.5 dB, and an input third-order intercept point IIP3 of -6.4dBm. The power dissipation is 6.4mW at 1.1V supply voltage. This LNA occupies an area of 1.1*0.88mm².

Keywords

CMOS analogue integrated circuits; circuit feedback; field effect MMIC; field effect analogue integrated circuits; low noise amplifiers; low-power electronics; CMOS LNA; RC feedback; body bias technology; cascode configuration; frequency 3.1 GHz to 10.6 GHz; input reflection coefficient; low noise amplifier; low power UWB LNA; power 6.4 mW; voltage 1.1 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Inductors; Low-noise amplifiers; Ultra wideband technology; Body bias; Low noise; Low power; RC feedback; UWB;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2013 IEEE 10th International Conference on

Conference_Location

Shenzhen

ISSN

2162-7541

Print_ISBN

978-1-4673-6415-7

Type

conf

DOI

10.1109/ASICON.2013.6811829

Filename

6811829