• DocumentCode
    2063778
  • Title

    15.1 An 85dB-DR 74.6dB-SNDR 50MHZ-BW CT MASH ΔΣ modulator in 28nm CMOS

  • Author

    Do-Yeon Yoon ; Ho, Stacy ; Hae-Seung Lee

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2015
  • fDate
    22-26 Feb. 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A multi-stage noise-shaping (MASH) architecture is an attractive approach for its aggressive noise-shaping capability and relaxed stability requirements. However, in practice the quantization noise leakage associated with the mismatch between analog and digital transfer functions degrades performance significantly. The discrete-time (DT) Sturdy-MASH (SMASH) architecture avoids this problem, and promises a higher performance potential [1]. Although straightforward in DT implementation, the SMASH architecture poses challenges in continuous-time (CT) implementation demanded by high-bandwidth applications. This paper presents a 3-1 CT MASH A2 modulator to address these challenges. The modulator is clocked at 1.8GHz and achieves 85dB DR, 85.2dBc SFDR, and 74.6dB SNDR at a 50MHz BW.
  • Keywords
    CMOS integrated circuits; continuous time systems; integrated circuit design; modulators; sigma-delta modulation; bandwidth 50 MHz; continuous-time implementation; discrete-time sturdy-MASH architecture; frequency 1.8 GHz; multistage noise-shaping architecture; Calibration; Clocks; Delays; Feedforward neural networks; Modulation; Multi-stage noise shaping; Noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4799-6223-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2015.7063031
  • Filename
    7063031