Title :
Physical modeling and alleviation of shallow-trench-isolation charging effects in silicon-on-insulator complementary bipolar technology
Author :
Yindeepol, Wipawan ; Foote, Richard ; De Santis, J. ; Krakowski, Tracey ; Bulucea, Constantin
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Oxide charging, adversely influencing PNP collector-base capacitance, has been observed and modeled physically in a complementary bipolar process that uses dielectric isolation. A practical solution to alleviate this effect is described along with trade-offs involved in process and device design.
Keywords :
bipolar transistors; isolation technology; leakage currents; silicon-on-insulator; PNP devices; SOI complementary bipolar technology; STI charging effects; Si-SiO2; collector-base capacitance; dielectric isolation; leakage effects; oxide charging; shallow-trench-isolation; silicon-on-insulator; Aluminum; Capacitance; Dielectric substrates; Doping; Etching; Insulation; Noise measurement; Planarization; Silicon on insulator technology; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365740
