DocumentCode
2063846
Title
General analysis of the impact of harmonic impedance on linearity in SiGe HBTs
Author
Liang, Qingqing ; Andrews, Joel M. ; Cressler, John D. ; Niu, Guofu
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2004
fDate
13-14 Sept. 2004
Firstpage
48
Lastpage
51
Abstract
A comprehensive study of transistor linearity using a harmonic-impedance-controlled technique is presented, and is applied to a generic optimization methodology of intermodulation distortion in SiGe HBTs. Harmonic load-pull simulations and measurement results are used to prove the usefulness of this optimization approach.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; intermodulation distortion; linearisation techniques; lumped parameter networks; optimisation; semiconductor device models; semiconductor materials; 110 GHz; HBT linearity; SiGe; harmonic load-pull simulations; harmonic-impedance-controlled technique; intermodulation distortion optimization; lumped-nonlinear-source model; Circuits; Frequency; Germanium silicon alloys; Harmonic analysis; Heterojunction bipolar transistors; Impedance; Linearity; Nonlinear systems; Optimization methods; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN
0-7803-8618-3
Type
conf
DOI
10.1109/BIPOL.2004.1365742
Filename
1365742
Link To Document