GaAs HBT for power applications [power amplifier applications]

Author

Berger, Otto

Author_Institution

TriQuint Semicond. Inc., Hillsboro, OR, USA

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

52

Lastpage

55

Abstract

The TriQuint HBT process is based on InGaP/GaAs with 2 μm or 3 μm emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F_T and F_max of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW/μm² are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.

Keywords

III-V semiconductors; cellular radio; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave power amplifiers; millimetre wave bipolar transistors; millimetre wave power transistors; semiconductor device breakdown; wireless LAN; 1 to 2 GHz; 1.9 GHz; 14 V; 2 micron; 24 V; 3 micron; 40 GHz; 6 GHz; 65 GHz; 7 V; 802.11a/b/g frequencies; HBT emitter length; HBT power amplifier; InGaP-GaAs; WLAN; breakdown voltages; cellular bands; hand-set amplifiers; power density; Bipolar transistors; Costs; Electronics industry; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Schottky diodes; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365743

Filename

1365743