DocumentCode
2063896
Title
15.6 12b 250MS/S pipelined ADC with virtual ground reference buffers
Author
Boo, Hyun H. ; Boning, Duane S. ; Hae-Seung Lee
Author_Institution
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2015
fDate
22-26 Feb. 2015
Firstpage
1
Lastpage
3
Abstract
High-performance op-amps in a switched-capacitor pipelined ADC consume high power to meet accuracy and speed requirements. This is aggravated by the decrease in intrinsic transistor gain and voltage headroom in nanoscale CMOS. Developments in pipelined ADCs have taken many unique directions to address these issues. Digital calibration of nonlinearity has enabled the use of low-performance op-amps. Non-op-amp-based approaches, such as zero-crossing-based circuits (ZCBC), the pulsed bucket brigade (PBB), and the ring amplifier (RA), have also been explored. This work presents a virtual ground reference buffer approach to significantly relax key op-amp specifications including unity-gain bandwidth, noise, and open-loop gain. Since the op-amp is allowed to settle fully, calibration to remove charge-transfer error in PBB and low gain or non-settling op-amp-based circuits is unnecessary. Also the transient current and corresponding voltage drop across switches and reference buffers in the ZCBCs and in non-settling op-amp-based circuits are avoided. The circuit is also shown to achieve higher maximum operating speed than alternative methods.
Keywords
CMOS analogue integrated circuits; analogue-digital conversion; buffer circuits; calibration; charge exchange; electric potential; operational amplifiers; switched capacitor networks; switches; PBB; RA; ZCBC; charge-transfer error; digital calibration; intrinsic transistor gain; nanoscale CMOS technology; nonop-amp-based approach; op-amp; pulsed bucket brigade; ring amplifier; switched-capacitor pipelined ADC; unity-gain bandwidth; virtual ground reference buffer approach; voltage drop; voltage headroom; word length 12 bit; zero-crossing-based circuit; Bandwidth; CMOS integrated circuits; Calibration; Capacitors; Noise; Parasitic capacitance; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid- State Circuits Conference - (ISSCC), 2015 IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4799-6223-5
Type
conf
DOI
10.1109/ISSCC.2015.7063036
Filename
7063036
Link To Document