Title :
SiGe technology requirements for millimeter-wave applications
Author :
Wennekers, P. ; Reuter, R.
Author_Institution :
TSO-EMEA Lab., Freescale Semicond. Inc., Berlin, Germany
Abstract :
This paper provides an overview, in which SiGe-HBT device and process features are important from a designer´s point of view, to enable successful circuit implementations at mm-wave frequencies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave integrated circuits; semiconductor materials; BiCMOS process; HBT devices; HBT processes; SiGe; mm-wave circuit implementation; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365750
