Title :
An investigation of the RF/analog characteristics of multiple variants SiGe HBTs for optical and wireless applications
Author :
Yang, M.T. ; Kuo, Darryl C W ; Ho, Patricia P C ; Kuo, C.W. ; Yeh, T.J. ; Chang, Alan K L ; Lee, C.Y. ; Chia, Y.T. ; Chern, G.J. ; Young, K.L. ; Tang, Denny D. ; Sun, Jack Y C
Author_Institution :
TSMC, Hsin-Chu, Taiwan
Abstract :
Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BVCEO values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; 130 GHz; 2.3 V; 3.4 V; 4.8 V; 60 GHz; 80 GHz; BiCMOS; HBT RF/analog characteristics; SiGe; bias dependence; collector implant variants; frequency dependence; geometry dependence; noise dependence; optical applications; power dependence; temperature dependence; vertical impurity profile; wireless applications; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Optical fiber networks; Radio frequency; Semiconductor device noise; Silicon germanium; Temperature dependence;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365752
