Title :
Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process
Author :
Miura, Makoto ; Shimamoto, Hiromi ; Hayami, Reiko ; Kodama, Akihiro ; Tominari, Tatsuya ; Hashimoto, Takashi ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885°C to 1000°C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; annealing; boron; diffusion; doping profiles; heterojunction bipolar transistors; millimetre wave bipolar transistors; optimisation; phosphorus; semiconductor materials; 1000 degC; 200 GHz; 885 degC; B; BiCMOS; HBT; P; SiGe; annealing temperature; base thickness; cut-off frequency; high-temperature annealing; maximum oscillation frequency; promoting emitter diffusion process; vertical profile optimization; Annealing; BiCMOS integrated circuits; Boron; Carbon dioxide; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Thermal engineering; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365753
