DocumentCode :
2064114
Title :
Dependence of thermal resistance on ambient and actual temperature
Author :
Paasschens, J.C.J. ; Harmsma, S. ; van der Toorn, Ramses
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
fYear :
2004
fDate :
13-14 Sept. 2004
Firstpage :
96
Lastpage :
99
Abstract :
We investigate the temperature dependence of thermal resistance. We extract the thermal resistance as a function of ambient temperature. The increase of thermal resistance due to self-heating leads to a non-linear relation between temperature and power dissipation. We show how to implement this in a compact model and what its effect is on simulations at high power dissipation.
Keywords :
semiconductor device models; thermal analysis; thermal conductivity; thermal resistance; thermal resistance measurement; compact models; high power dissipation simulations; self-heating; temperature/power dissipation nonlinear relationship; thermal conductivity; thermal resistance actual temperature dependence; thermal resistance ambient temperature dependence; thermal resistance extraction; thermal runaway; Electrical resistance measurement; Gallium arsenide; Heat sinks; Modems; Power dissipation; Temperature dependence; Temperature distribution; Thermal conductivity; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
Type :
conf
DOI :
10.1109/BIPOL.2004.1365754
Filename :
1365754
Link To Document :
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