Investigation of advanced SiGe heterojunction bipolar transistors at high power densities

Author

Pfost, Martin ; Brenner, Pietro ; Lachner, Rudolf

Author_Institution

Infineon Technol. AG, Munich, Germany

fYear

2004

fDate

13-14 Sept. 2004

Firstpage

100

Lastpage

103

Abstract

In this paper, we investigate the behavior of advanced SiGe HBTs operating at very high power densities. Measurement results are presented and explained using a model that considers both impact ionization and self-heating. It is shown that even for small transistors, the temperature difference between the center and the ends of the emitter finger causes a significantly more nonuniform current density than expected solely from impact ionization. This requires special attention because the high temperatures that result from very large current densities can degrade the device lifetime.

Keywords

Ge-Si alloys; current density; electric current measurement; heterojunction bipolar transistors; impact ionisation; millimetre wave bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; 150 GHz; 180 GHz; SiGe; device lifetime degradation; distributed electro-thermal transistor model; emitter finger center/end temperature difference; heterojunction bipolar transistors; high power density HBT; impact ionization; nonuniform current density; self-heating; Current density; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Impact ionization; Integrated circuit modeling; Power generation; Silicon germanium; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Print_ISBN

0-7803-8618-3

Type

conf

DOI

10.1109/BIPOL.2004.1365755

Filename

1365755