Title :
Modelling the excess noise due to avalanche multiplication in (hetero-junction) bipolar transistors
Author :
Paasschens, J.C.J. ; de Kort, R.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
We study the noise behaviour of bipolar transistors for collector voltages close to and beyond the collector-emitter breakdown voltage. We model the excess noise due to amplification of shot noise and due to the impact ionisation itself, both for weak avalanche and for strong avalanche. Our new model accurately predicts the measurements, without the need for parameter fitting to noise data.
Keywords :
avalanche breakdown; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; semiconductor device noise; shot noise; HBT excess noise modelling; avalanche multiplication; collector-emitter breakdown voltage; hetero-junction bipolar transistors; impact ionisation; shot noise amplification; strong avalanche mode; weak avalanche mode; Bipolar transistors; Breakdown voltage; Circuit noise; Impact ionization; Impedance; Integrated circuit noise; Low voltage; Noise figure; Noise generators; Noise measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
Print_ISBN :
0-7803-8618-3
DOI :
10.1109/BIPOL.2004.1365757
