Fully-integrated WCDMA direct conversion SiGeC BiCMOS receiver

This paper describes a WCDMA direct conversion receiver which has been integrated in a BiCMOS SiGe-carbon process featuring 0.25 μm/f_T=60 GHz bipolar transistors. This receiver includes an integrated RF-front-end with local oscillator quadrature generator, 5^th order Butterworth analog baseband lowpass filter (LPF) and variable gain amplifier (VGA), cut-off frequency calibrator, DAC for DC-offset calibration, serial bus interface and voltage and current reference generators. In the high/low gain modes, this device consumes 25 mA and 20 mA respectively with 2.7 V power supply. The die is wire bonded directly on the validation board. Within the receive band, the measurements show 51 dB of overall gain, NF=5 dB, IIP3= -9 dBm, ICP1 = -15dBm.